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2000), which makes them very attractive for realizing broadband devices in the millimetr-wave domain. , 2009). As an illustration of our current activities towards the integration of VO2 layers in RFmicrowave (RF- MW) devices, we will present the design, fabrication and caracterization of thermally activated MW switches and their integration in a new type of thermally triggered reconfigurable 4-bit band stop filter designed to operate in the 9- 11 GHz frequency range. 3. ). According to the multivalency of vanadium ion and its complex oxide structure (Griffiths & Eastwood, 1974), numerous phases with stoechiometries close to VO2 can exist (from V4O to V2O5) and the synthesis of phase pure VO2 thin films is an important challenge.

We tested different pattern dimensions for the VO2 switch (from 200 to 400-m long and 100 to 200-m wide) and for the heating Ni:ta-C thin film resistors (100 to 350-m long and 50 to 150-m wide). For the device shown in Fig. 9 a (VO2 pattern of 400-m long, 200-m wide, 200-nm thick pattern between the two metallic electrodes), when applying a current (up to 10 mA) to the Ni:ta-C heating element (340-m long, 150-m wide, with an overall resistance of ~11 k) the heat generated in the micro-heater will dissipate to the underneath VO2 layer and will raise its temperature above the SMT’s transition temperature (around 68°C).

S. Department of Commerce, AD-A220 095. 13. V. V. (2003). World’s history of shaped charge. Proceeding of the Russian conference “Science, Industry and defense”, Novosibirsk, April 23-25, pp. 51-53. 14. P. A. (1989). Fundamentals of Shaped Charges. 130 p. CMCPress. Baltimore, MD. 15. , Shreffler, Willing F. (1954). The limiting conditions for jet formation at high speed. : Mechanics, 1(23), (in Russian). Explosive pulsed plasma antennas for information protection 33 16. , Mali V. (1975). About the influences of viscous of metall to the jet formation process.

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