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Additional info for Advances in Electronics and Electron Phisics. Vol. 43
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112 112 ...................... 135 ents ......... I. INTRODUCTION The promise of the electron beam as a means of addressing large quantities of digital information with high speed and low systems cost has intrigued many workers since the early days of modern computing machines. The major advantage of any beam memory, whether photons, electrons, or * Present address: HP Laboratories, Hewlett-Packard Company, 1501 Page Mill Road, Palo Alto, California, 94304. 43 44 JOHN KELLY ions, lies in its ability to address a location (or locations) on a storage surface randomly from the third dimension.
Additionally, relatively large amounts of data can be stored, using few components, with the consequent advantage of low cost. This review is limited to electron beam addressed memories (EBAMs) with emphasis focused on write/read systems rather than on data recording. The objective is to review the current status of research and, in so doing, stimulate activity in an area that appears fundamentally attractive. The references are extensive but not exhaustive. Unfortunately, because much of the work in this field has not been published, it is not generally available to the researcher.